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ZXMP6A17N8
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-60
?
?
?
?
?
?
-0.5
± 100
V
μ A
nA
I D = -250 μ A, V GS = 0V
V DS = -60V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 6)
Forward Transconductance (Notes 6 & 7)
Diode Forward Voltage (Note 6)
Reverse recovery time (Note 7)
Reverse recovery charge (Note 7)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
-1.0
?
?
?
?
?
?
4.7
-0.85
25.1
27.2
?
0.125
0.190
?
-0.95
?
?
V
?
S
V
ns
nC
I D = -250 μ A, V DS = V GS
V GS = -10V, I D = -2.3A
V GS = -4.5V, I D = -1.9A
V DS = -15V, I D = -2.3A
I S = -2.0A, V GS = 0V
I S = -1.7A, di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 8)
Total Gate Charge (Note 8)
C iss
C oss
C rss
Q g
Q g
?
?
?
?
?
637
70
53
9.0
17.7
?
?
?
?
?
pF
pF
pF
nC
nC
V DS = -30V, V GS = 0V
f = 1MHz
V GS = -4.5V
V DS = -30V
Gate-Source Charge (Note 8)
Gate-Drain Charge (Note 8)
Turn-On Delay Time (Note 8)
Q gs
Q gd
t D(on)
?
?
?
1.6
4.4
2.6
?
?
?
nC
nC
ns
V GS = -10V
I D = -2.2A
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
t r
t D(off)
t f
?
?
?
3.4
26.2
11.3
?
?
?
ns
ns
ns
V DD = -30V, V GS = -10V
I D = -1A, R G ? 6.0 Ω
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
4 of 8
www.diodes.com
March 2010
? Diodes Incorporated
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